2N7002ET7G - ON Semiconductor

Part Number	2N7002ET7G
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.5 Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.81nC @ 5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	40pF @ 25V
FET Feature	-
Power Dissipation (Max)	300mW (Tj)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
2N7000	Fairchild/ON Semiconductor	MOSFET N-CH 60V 200MA TO-92	Details
2N7000,126	NXP USA Inc.	MOSFET N-CH 60V 300MA TO-92	Details
2N7000-D26Z	ON Semiconductor	MOSFET N-CH 60V 200MA TO-92	Details
2N7000-D74Z	ON Semiconductor	MOSFET N-CH 60V 200MA TO-92	Details
2N7000-D75Z	ON Semiconductor	MOSFET N-CH 60V 200MA TO-92	Details
2N7000-G	Microchip Technology	MOSFET N-CH 60V 0.2A TO92-3	Details
2N7000BU	Fairchild/ON Semiconductor	MOSFET N-CH 60V 0.2A TO-92	Details
2N7000BU_T	ON Semiconductor	MOSFET N-CH 60V TO92	Details
2N7000CSM	SEME-LAB	N.CHANNEL ENHANCEMENT MODE MOS TRANSISTOR	Details
2N7000G	ON Semiconductor	MOSFET N-CH 60V 200MA TO-92	Details