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Home › Product Categories › Discrete Semiconductor › Transistors - Bipolar (BJT) - Single › 2N2907AE4
2N2907AE4

2N2907AE4 - Microsemi Corporation

Part Number
2N2907AE4
Manufacturer
Microsemi Corporation
Brief Description
DIE TRANS PNP MED PWR GEN PURP T
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
2N2907AE4 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - Bipolar (BJT) - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
33257 pcs
Reference Price
USD 4.95073/pcs
Our Price
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2N2907AE4 Detailed Description

Part Number 2N2907AE4
Part Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 600mA
Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Power - Max 500mW
Frequency - Transition -
Operating Temperature -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Supplier Device Package TO-18
Weight -
Country of Origin -

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