| Part Number | 1N5806E3/TR |
|---|---|
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 150V |
| Current - Average Rectified (Io) | 2.5A |
| Voltage - Forward (Vf) (Max) @ If | 975mV @ 2.5A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25ns |
| Current - Reverse Leakage @ Vr | 1µA @ 150V |
| Capacitance @ Vr, F | 25pF @ 10V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | A, Axial |
| Supplier Device Package | A, Axial |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
1N5802 | Microsemi Corporation | DIODE GEN PURP 50V 1A AXIAL | Details |
 |
1N5802US | Microsemi Corporation | DIODE GEN PURP 50V 1A D5A | Details |
|
1N5803 | Microsemi Corporation | DIODE GEN PURP 75V 1A AXIAL | Details |
|
1N5804 | Microsemi Corporation | DIODE GEN PURP 100V 1A AXIAL | Details |
 |
1N5804US | Microsemi Corporation | DIODE GEN PURP 100V 1A D5A | Details |
|
1N5805 | Microsemi Corporation | DIODE GEN PURP 125V 1A AXIAL | Details |
 |
1N5806 | Semtech Corporation | D MET 2.5A SFST 150V | Details |
|
1N5806/TR | Microsemi Corporation | UFRFRR | Details |
|
1N5806C.TR | Semtech Corporation | DIODE GEN PURP 150V 2.5A AXIAL | Details |
|
1N5806E3/TR | Microsemi Corporation | UFRFRR | Details |
