1N5806E3/TR - Microsemi Corporation

Part Number	1N5806E3/TR
Part Status	Active
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	150V
Current - Average Rectified (Io)	2.5A
Voltage - Forward (Vf) (Max) @ If	975mV @ 2.5A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	25ns
Current - Reverse Leakage @ Vr	1µA @ 150V
Capacitance @ Vr, F	25pF @ 10V, 1MHz
Mounting Type	Through Hole
Package / Case	A, Axial
Supplier Device Package	A, Axial
Operating Temperature - Junction	-65°C ~ 175°C
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
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1N5802US	Microsemi Corporation	DIODE GEN PURP 50V 1A D5A	Details
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1N5804	Microsemi Corporation	DIODE GEN PURP 100V 1A AXIAL	Details
1N5804US	Microsemi Corporation	DIODE GEN PURP 100V 1A D5A	Details
1N5805	Microsemi Corporation	DIODE GEN PURP 125V 1A AXIAL	Details
1N5806	Semtech Corporation	D MET 2.5A SFST 150V	Details
1N5806/TR	Microsemi Corporation	UFRFRR	Details
1N5806C.TR	Semtech Corporation	DIODE GEN PURP 150V 2.5A AXIAL	Details
1N5806E3/TR	Microsemi Corporation	UFRFRR	Details