VMO580-02F - IXYS

Part Number	VMO580-02F
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	580A
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 50mA
Gate Charge (Qg) (Max) @ Vgs	2750nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	-
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	-
Rds On (Max) @ Id, Vgs	3.8 mOhm @ 430A, 10V
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	Y3-Li
Package / Case	Y3-Li
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	VMO550-01F	IXYS	MOSFET N-CH 100V 590A Y3-DCB	Details
	VMO580-02F	IXYS	MOSFET N-CH 200V 580A MODULE	Details