IXTT3N200P3HV - IXYS

Part Number	IXTT3N200P3HV
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	2000V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1860pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	520W (Tc)
Rds On (Max) @ Id, Vgs	8 Ohm @ 1.5A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-268
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IXTT30N50L	IXYS	MOSFET N-CH 500V 30A TO-268	Details
IXTT30N50L2	IXYS	MOSFET N-CH 500V 30A TO-268	Details
IXTT30N50P	IXYS	MOSFET N-CH 500V 30A TO-268 D3	Details
IXTT30N60L2	IXYS	MOSFET N-CH 600V 30A TO-268	Details
IXTT30N60P	IXYS	MOSFET N-CH 600V 30A TO-268 D3	Details
IXTT34N65X2HV	IXYS	MOSFET N-CH	Details
IXTT360N055T2	IXYS	MOSFET N-CH 55V 360A TO268	Details
IXTT36N50P	IXYS	MOSFET N-CH 500V 36A TO-268 D3	Details
IXTT36P10	IXYS	MOSFET P-CH 100V 36A TO-268	Details
IXTT3N200P3HV	IXYS	2000V TO 3000V POLAR3 POWER MOSF	Details