IXTP3N100D2 - IXYS

Part Number	IXTP3N100D2
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	-
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	37.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	1020pF @ 25V
Vgs (Max)	±20V
FET Feature	Depletion Mode
Power Dissipation (Max)	125W (Tc)
Rds On (Max) @ Id, Vgs	5.5 Ohm @ 1.5A, 0V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IXTP01N100D	IXYS	MOSFET N-CH 1KV .1A TO-220AB	Details
IXTP02N120P	IXYS	MOSFET N-CH 1200V 0.2A TO-220	Details
IXTP02N50D	IXYS	MOSFET N-CH 500V 0.2A TO-220	Details
IXTP05N100	IXYS	MOSFET N-CH 1000V 0.75A TO-220	Details
IXTP05N100M	IXYS	MOSFET N-CH 1000V 700MA TO-220	Details
IXTP05N100P	IXYS	MOSFET N-CH 1000V 500MA TO-263	Details
IXTP06N120P	IXYS	MOSFET N-CH 1200V 600MA TO-220	Details
IXTP08N100D2	IXYS	MOSFET N-CH 1000V 0.8A TO220AB	Details
IXTP08N100P	IXYS	MOSFET N-CH 1000V 800MA TO-220	Details
IXTP08N120P	IXYS	MOSFET N-CH 1200V 800MA TO-220	Details