IXFN50N120SIC - IXYS

Part Number	IXFN50N120SIC
Part Status	Active
FET Type	N-Channel
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	1200V
Current - Continuous Drain (Id) @ 25°C	47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	50 mOhm @ 40A, 20V
Vgs(th) (Max) @ Id	2.2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs	100nC @ 20V
Vgs (Max)	+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds	1900pF @ 1000V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	SOT-227B
Package / Case	SOT-227-4, miniBLOC
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IXFN50N120SIC	IXYS	MOSFET N-CH	Details
IXFN50N120SK	IXYS	MOSFET N-CH	Details
IXFN50N50	IXYS	MOSFET N-CH 500V 50A SOT-227B	Details
IXFN50N80Q2	IXYS	MOSFET N-CH 800V 50A SOT-227B	Details
IXFN520N075T2	IXYS	MOSFET N-CH 75V 480A SOT227	Details
IXFN52N100X	IXYS	MOSFET 1KV 44A ULTRA JCT SOT227	Details
IXFN52N90P	IXYS	MOSFET N-CH 900V 43A SOT227	Details
IXFN55N50	IXYS	MOSFET N-CH 500V 55A SOT-227B	Details
IXFN55N50F	IXYS	MOSFET N-CH 500V 55A SOT227B	Details
IXFN56N90P	IXYS	MOSFET N-CH 900V 56A SOT-227B	Details