IXFN50N80Q2 - IXYS

Part Number	IXFN50N80Q2
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	50A
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	260nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	13500pF @ 25V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	1135W (Tc)
Rds On (Max) @ Id, Vgs	160 mOhm @ 500mA, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	SOT-227B
Package / Case	SOT-227-4, miniBLOC
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IXFN100N10S1	IXYS	MOSFET N-CH 100V 100A SOT-227B	Details
IXFN100N10S2	IXYS	MOSFET N-CH 100V 100A SOT-227B	Details
IXFN100N10S3	IXYS	MOSFET N-CH 100V 100A SOT-227B	Details
IXFN100N20	IXYS	MOSFET N-CH 200V 100A SOT-227B	Details
IXFN100N25	IXYS	MOSFET N-CH 250V 100A SOT-227B	Details
IXFN100N50P	IXYS	MOSFET N-CH 500V 90A SOT-227B	Details
IXFN100N50Q3	IXYS	MOSFET N-CH 500V 82A SOT-227	Details
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IXFN106N20	IXYS	MOSFET N-CH 200V 106A SOT-227B	Details