| Part Number | IPP65R074C6XKSA1 |
|---|---|
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 57.7A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 1.4mA |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3020pF @ 100V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 480.8W (Tc) |
| Rds On (Max) @ Id, Vgs | 74 mOhm @ 13.9A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO-220-3 |
| Package / Case | TO-220-3 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
IPP65R045C7XKSA1 | Infineon Technologies | MOSFET N-CH 650V 46A TO-220-3 | Details |
|
IPP65R065C7XKSA1 | Infineon Technologies | MOSFET N-CH 650V TO-220-3 | Details |
|
IPP65R074C6XKSA1 | Infineon Technologies | MOSFET N-CH 650V 57.7A TO220 | Details |
|
IPP65R095C7XKSA1 | Infineon Technologies | MOSFET N-CH 650V TO-220-3 | Details |
|
IPP65R099C6XKSA1 | Infineon Technologies | MOSFET N-CH 650V 38A TO220 | Details |
|
IPP65R110CFDAAKSA1 | Infineon Technologies | MOSFET N-CH 650V TO-220-3 | Details |
|
IPP65R110CFDXKSA1 | Infineon Technologies | MOSFET N-CH 700V 31.2A TO220 | Details |
 |
IPP65R110CFDXKSA2 | Infineon Technologies | HIGH POWERLEGACY | Details |
|
IPP65R125C7XKSA1 | Infineon Technologies | MOSFET N-CH 650V 18A TO220 | Details |
|
IPP65R150CFDAAKSA1 | Infineon Technologies | MOSFET N-CH 650V TO-220-3 | Details |
