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Home › Product Categories › Discrete Semiconductor › Transistors - FETs, MOSFETs - Single › IPP65R099C6XKSA1
IPP65R099C6XKSA1

IPP65R099C6XKSA1 - Infineon Technologies

Part Number
IPP65R099C6XKSA1
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 650V 38A TO220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IPP65R099C6XKSA1 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
607 pcs
Reference Price
USD 6.68/pcs
Our Price
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IPP65R099C6XKSA1 Detailed Description

Part Number IPP65R099C6XKSA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2780pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 278W (Tc)
Rds On (Max) @ Id, Vgs 99 mOhm @ 12.8A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO-220-3
Package / Case TO-220-3
Weight -
Country of Origin -

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