IPAW60R180P7SXKSA1

IPAW60R180P7SXKSA1 - Infineon Technologies

Part Number
IPAW60R180P7SXKSA1
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 650V 18A TO220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IPAW60R180P7SXKSA1 PDF online browsing
Datasheet PDF Download
IPAW60R180P7SXKSA1.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
837 pcs
Reference Price
USD 2.54/pcs
Our Price
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IPAW60R180P7SXKSA1 Detailed Description

Part Number IPAW60R180P7SXKSA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1081pF @ 400V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 26W (Tc)
Rds On (Max) @ Id, Vgs 180 mOhm @ 5.6A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220 Full Pack
Package / Case TO-220-3 Full Pack
Weight -
Country of Origin -

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