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Home › Product Categories › Discrete Semiconductor › Transistors - IGBTs - Modules › DF75R12W1H4FB11BOMA2
DF75R12W1H4FB11BOMA2

DF75R12W1H4FB11BOMA2 - Infineon Technologies

Part Number
DF75R12W1H4FB11BOMA2
Manufacturer
Infineon Technologies
Brief Description
MOD DIODE BRIDGE EASY1B-2-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
DF75R12W1H4FB11BOMA2 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - IGBTs - Modules
Delivery Time
1 Day
Date Code
New
Stock Quantity
2242 pcs
Reference Price
USD 73.37958/pcs
Our Price
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DF75R12W1H4FB11BOMA2 Detailed Description

Part Number DF75R12W1H4FB11BOMA2
Part Status Not For New Designs
IGBT Type -
Configuration Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 25A
Power - Max 20mW
Vce(on) (Max) @ Vge, Ic 2.65V @ 15V, 25A
Current - Collector Cutoff (Max) 1mA
Input Capacitance (Cies) @ Vce 2nF @ 25V
Input Standard
NTC Thermistor Yes
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module
Weight -
Country of Origin -

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DF75R12W1H4FB11BOMA1 DF75R12W1H4FB11BOMA1 Infineon Technologies MOD DIODE BRIDGE EASY1B-2-1 Details
DF75R12W1H4FB11BOMA2 DF75R12W1H4FB11BOMA2 Infineon Technologies MOD DIODE BRIDGE EASY1B-2-1 Details