BSZ086P03NS3EGATMA1 Detailed Description
| Part Number |
BSZ086P03NS3EGATMA1 |
| Part Status |
Active |
| FET Type |
P-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
30V |
| Current - Continuous Drain (Id) @ 25°C |
13.5A (Ta), 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
6V, 10V |
| Rds On (Max) @ Id, Vgs |
8.6 mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id |
3.1V @ 105µA |
| Gate Charge (Qg) (Max) @ Vgs |
57.5nC @ 10V |
| Vgs (Max) |
±25V |
| Input Capacitance (Ciss) (Max) @ Vds |
4785pF @ 15V |
| FET Feature |
- |
| Power Dissipation (Max) |
2.1W (Ta), 69W (Tc) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
PG-TSDSON-8 |
| Package / Case |
8-PowerTDFN |
| Weight |
- |
| Country of Origin |
- |
RELATED PRODUCTS FOR BSZ086P03NS3EGATMA1
