BSC018NE2LSIATMA1

BSC018NE2LSIATMA1 - Infineon Technologies

Part Number
BSC018NE2LSIATMA1
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 25V 29A TDSON-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
BSC018NE2LSIATMA1 PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
281357 pcs
Reference Price
USD 0.5852/pcs
Our Price
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BSC018NE2LSIATMA1 Detailed Description

Part Number BSC018NE2LSIATMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 29A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.8 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 12V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8
Package / Case 8-PowerTDFN
Weight -
Country of Origin -

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