| Part Number | BSC018NE2LSI |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 29A (Ta), 100A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500pF @ 12V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 69W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8 mOhm @ 30A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8 |
| Package / Case | 8-PowerTDFN |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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BSC009NE2LS | Infineon Technologies | MOSFET N-CH 25V 41A TDSON-8 | Details |
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BSC009NE2LS5ATMA1 | Infineon Technologies | MOSFET N-CH 25V 41A 8TDSON | Details |
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BSC009NE2LS5IATMA1 | Infineon Technologies | MOSFET N-CH 25V 40A 8TDSON IND | Details |
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BSC009NE2LSATMA1 | Infineon Technologies | MOSFET N-CH 25V 41A TDSON-8 | Details |
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BSC010N04LS6ATMA1 | Infineon Technologies | TRENCH 40V | Details |
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BSC010N04LSATMA1 | Infineon Technologies | MOSFET N-CH 40V 100A TDSON-8 | Details |
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BSC010N04LSCATMA1 | Infineon Technologies | DIFFERENTIATED MOSFETS | Details |
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BSC010N04LSIATMA1 | Infineon Technologies | MOSFET N-CH 40V 37A 8TDSON | Details |
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BSC010N04LSTATMA1 | Infineon Technologies | DIFFERENTIATED MOSFETS | Details |
