GB01SLT12-220 - GeneSiC Semiconductor

Part Number	GB01SLT12-220
Part Status	Active
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	1200V
Current - Average Rectified (Io)	1A
Voltage - Forward (Vf) (Max) @ If	1.8V @ 1A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	2µA @ 1200V
Capacitance @ Vr, F	69pF @ 1V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-220-2
Supplier Device Package	TO-220AC
Operating Temperature - Junction	-55°C ~ 175°C
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
GB01SLT06-214	GeneSiC Semiconductor	DIODE SCHOTTKY 650V 1A DO214AA	Details
GB01SLT12-214	GeneSiC Semiconductor	SIC SCHOTTKY DIODE 1200V 1A	Details
GB01SLT12-220	GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 1A TO220AC	Details
GB01SLT12-252	GeneSiC Semiconductor	DIODE SILICON 1.2KV 1A TO252	Details