GA10SICP12-263 Detailed Description
| Part Number |
GA10SICP12-263 |
| Part Status |
Active |
| FET Type |
- |
| Technology |
SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss) |
1200V |
| Current - Continuous Drain (Id) @ 25°C |
25A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) |
- |
| Vgs(th) (Max) @ Id |
- |
| Gate Charge (Qg) (Max) @ Vgs |
- |
| Input Capacitance (Ciss) (Max) @ Vds |
1403pF @ 800V |
| Vgs (Max) |
- |
| FET Feature |
- |
| Power Dissipation (Max) |
170W (Tc) |
| Rds On (Max) @ Id, Vgs |
100 mOhm @ 10A |
| Operating Temperature |
175°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
D2PAK (7-Lead) |
| Package / Case |
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Weight |
- |
| Country of Origin |
- |
RELATED PRODUCTS FOR GA10SICP12-263
