GA10SICP12-263 - GeneSiC Semiconductor

Part Number	GA10SICP12-263
Part Status	Active
FET Type	-
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	1200V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	-
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	1403pF @ 800V
Vgs (Max)	-
FET Feature	-
Power Dissipation (Max)	170W (Tc)
Rds On (Max) @ Id, Vgs	100 mOhm @ 10A
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK (7-Lead)
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	GA10SICP12-247	GeneSiC Semiconductor	SIC CO-PACK SJT/RECT 10A 1.2KV	Details
	GA10SICP12-263	GeneSiC Semiconductor	TRANS SJT 1200V 25A TO263-7	Details