DMG6602SVTQ-7 - Diodes Incorporated

Part Number	DMG6602SVTQ-7
Part Status	Active
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	3.4A, 2.8A
Rds On (Max) @ Id, Vgs	60 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 15V
Power - Max	840mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package	TSOT-26
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
DMG6601LVT-7	Diodes Incorporated	MOSFET N/P-CH 30V 26TSOT	Details
DMG6602SVT	ZETEXDIODES	DMG6602SVT ZETEX/DIODES SOT-23.. New Original Stocks	Details
DMG6602SVT-7	Diodes Incorporated	MOSFET N/P-CH 30V TSOT23-6	Details
DMG6602SVTQ-7	Diodes Incorporated	MOSFET N/P-CH 30V TSOT26	Details
DMG6602SVTX-7	Diodes Incorporated	MOSFET BVDSS 25V-30V TSOT26 TR	Details