VP2206N3-G-P003 - Microchip Technology

Part Number	VP2206N3-G-P003
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	640mA (Tj)
Drive Voltage (Max Rds On,Min Rds On)	5V, 10V
Vgs(th) (Max) @ Id	3.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	450pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	740mW (Tc)
Rds On (Max) @ Id, Vgs	900 mOhm @ 3.5A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-92-3
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
VP2206N2	Microchip Technology	MOSFET P-CH 60V 750MA 3TO-39	Details
VP2206N3-G	Microchip Technology	MOSFET P-CH 60V 640MA TO92-3	Details
VP2206N3-G-P003	Microchip Technology	MOSFET P-CH 60V 640MA TO92-3	Details