TN2640LG-G - Microchip Technology

Part Number	TN2640LG-G
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	400V
Current - Continuous Drain (Id) @ 25°C	260mA (Tj)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	225pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	1.3W (Ta)
Rds On (Max) @ Id, Vgs	5 Ohm @ 500mA, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOIC
Package / Case	8-SOIC (0.154", 3.90mm Width)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
TN2640K4-G	Microchip Technology	MOSFET N-CH 400V 500MA 3DPAK	Details
TN2640LG-G	Microchip Technology	MOSFET N-CH 400V 260MA 8SOIC	Details
TN2640N3-G	Microchip Technology	MOSFET N-CH 400V 0.22A TO92-3	Details