| Número de pieza | VS-GT100DA120UF |
|---|---|
| Estado de la pieza | Active |
| Tipo de IGBT | Trench |
| Configuración | Single |
| Voltaje: ruptura del emisor del colector (máximo) | 1200V |
| Current - Collector (Ic) (Max) | 187A |
| Potencia - Max | 890W |
| Vce (on) (Max) @ Vge, Ic | 2.55V @ 15V, 100A |
| Corriente - corte de colector (máximo) | 100µA |
| Capacitancia de entrada (Cies) @ Vce | 6.15nF @ 25V |
| Entrada | Standard |
| Termistor NTC | No |
| Temperatura de funcionamiento | -40°C ~ 150°C (TJ) |
| Tipo de montaje | Chassis Mount |
| Paquete / caja | SOT-227-4, miniBLOC |
| Paquete de dispositivo del proveedor | SOT-227 |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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VS-GT100DA120U | Vishay Semiconductor Diodes Division | IGBT 1200V 258A 893W SOT-227 | Detalles |
|
VS-GT100DA120UF | Vishay Semiconductor Diodes Division | OUTPUT SW MODULES - SOT-227 IG | Detalles |
|
VS-GT100DA60U | Vishay Semiconductor Diodes Division | IGBT 600V 184A 577W SOT-227 | Detalles |
|
VS-GT100LA120UX | Vishay Semiconductor Diodes Division | IGBT 1200V 134A 463W SOT-227 | Detalles |
|
VS-GT100NA120UX | Vishay Semiconductor Diodes Division | IGBT 1200V 134A 463W SOT-227 | Detalles |
|
VS-GT100TP120N | Vishay Semiconductor Diodes Division | IGBT 1200V 180A 652W INT-A-PAK | Detalles |
|
VS-GT100TP60N | Vishay Semiconductor Diodes Division | IGBT 600V 160A 417W INT-A-PAK | Detalles |
|
VS-GT105LA120UX | Vishay Semiconductor Diodes Division | IGBT 1200V 105A LS CHOP SOT-227 | Detalles |
|
VS-GT105NA120UX | Vishay Semiconductor Diodes Division | IGBT 1200V 105A HS CHOP SOT-227 | Detalles |
|
VS-GT120DA65U | Vishay Semiconductor Diodes Division | OUTPUT SW MODULES - SOT-227 IG | Detalles |
