| Número de pieza | VS-GT100TP120N |
|---|---|
| Estado de la pieza | Obsolete |
| Tipo de IGBT | Trench |
| Configuración | Half Bridge |
| Voltaje: ruptura del emisor del colector (máximo) | 1200V |
| Current - Collector (Ic) (Max) | 180A |
| Potencia - Max | 652W |
| Vce (on) (Max) @ Vge, Ic | 2.35V @ 15V, 100A |
| Corriente - corte de colector (máximo) | 5mA |
| Capacitancia de entrada (Cies) @ Vce | 12.8nF @ 30V |
| Entrada | Standard |
| Termistor NTC | No |
| Temperatura de funcionamiento | 175°C (TJ) |
| Tipo de montaje | Chassis Mount |
| Paquete / caja | INT-A-PAK (3 + 4) |
| Paquete de dispositivo del proveedor | INT-A-PAK |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
|
VS-GT100DA120U | Vishay Semiconductor Diodes Division | IGBT 1200V 258A 893W SOT-227 | Detalles |
 |
VS-GT100DA120UF | Vishay Semiconductor Diodes Division | OUTPUT SW MODULES - SOT-227 IG | Detalles |
|
VS-GT100DA60U | Vishay Semiconductor Diodes Division | IGBT 600V 184A 577W SOT-227 | Detalles |
|
VS-GT100LA120UX | Vishay Semiconductor Diodes Division | IGBT 1200V 134A 463W SOT-227 | Detalles |
|
VS-GT100NA120UX | Vishay Semiconductor Diodes Division | IGBT 1200V 134A 463W SOT-227 | Detalles |
|
VS-GT100TP120N | Vishay Semiconductor Diodes Division | IGBT 1200V 180A 652W INT-A-PAK | Detalles |
|
VS-GT100TP60N | Vishay Semiconductor Diodes Division | IGBT 600V 160A 417W INT-A-PAK | Detalles |
|
VS-GT105LA120UX | Vishay Semiconductor Diodes Division | IGBT 1200V 105A LS CHOP SOT-227 | Detalles |
|
VS-GT105NA120UX | Vishay Semiconductor Diodes Division | IGBT 1200V 105A HS CHOP SOT-227 | Detalles |
|
VS-GT120DA65U | Vishay Semiconductor Diodes Division | OUTPUT SW MODULES - SOT-227 IG | Detalles |
