| Número de pieza | VS-GB200TH120N |
|---|---|
| Estado de la pieza | Active |
| Tipo de IGBT | - |
| Configuración | Half Bridge |
| Voltaje: ruptura del emisor del colector (máximo) | 1200V |
| Current - Collector (Ic) (Max) | 360A |
| Potencia - Max | 1136W |
| Vce (on) (Max) @ Vge, Ic | 2.35V @ 15V, 200A |
| Corriente - corte de colector (máximo) | 5mA |
| Capacitancia de entrada (Cies) @ Vce | 14.9nF @ 25V |
| Entrada | Standard |
| Termistor NTC | No |
| Temperatura de funcionamiento | 150°C (TJ) |
| Tipo de montaje | Chassis Mount |
| Paquete / caja | Double INT-A-PAK (3 + 4) |
| Paquete de dispositivo del proveedor | Double INT-A-PAK |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
|
VS-GB05XP120KTPBF | Vishay Semiconductor Diodes Division | MODULE MTP SWITCH | Detalles |
|
VS-GB100DA60UP | Vishay Semiconductor Diodes Division | MODULE IGBT SOT-227 | Detalles |
|
VS-GB100LH120N | Vishay Semiconductor Diodes Division | IGBT 1200V 200A 833W INT-A-PAK | Detalles |
|
VS-GB100LP120N | Vishay Semiconductor Diodes Division | IGBT 1200V 200A 658W INT-A-PAK | Detalles |
|
VS-GB100NH120N | Vishay Semiconductor Diodes Division | IGBT 1200V 200A 833W INT-A-PAK | Detalles |
|
VS-GB100TH120N | Vishay Semiconductor Diodes Division | IGBT 1200V 200A 833W INT-A-PAK | Detalles |
|
VS-GB100TH120U | Vishay Semiconductor Diodes Division | IGBT 1200V 200A 1136W INT-A-PAK | Detalles |
|
VS-GB100TP120N | Vishay Semiconductor Diodes Division | IGBT 1200V 200A 650W INT-A-PAK | Detalles |
|
VS-GB100TP120U | Vishay Semiconductor Diodes Division | IGBT 1200V 150A 735W INT-A-PAK | Detalles |
|
VS-GB100TS60NPBF | Vishay Semiconductor Diodes Division | IGBT 600V 108A 390W INT-A-PAK | Detalles |
