| Número de pieza | VS-GA200TH60S |
|---|---|
| Estado de la pieza | Active |
| Tipo de IGBT | - |
| Configuración | Half Bridge |
| Voltaje: ruptura del emisor del colector (máximo) | 600V |
| Current - Collector (Ic) (Max) | 260A |
| Potencia - Max | 1042W |
| Vce (on) (Max) @ Vge, Ic | 1.9V @ 15V, 200A (Typ) |
| Corriente - corte de colector (máximo) | 5µA |
| Capacitancia de entrada (Cies) @ Vce | 13.1nF @ 25V |
| Entrada | Standard |
| Termistor NTC | No |
| Temperatura de funcionamiento | -40°C ~ 150°C (TJ) |
| Tipo de montaje | Chassis Mount |
| Paquete / caja | Double INT-A-PAK (3 + 4) |
| Paquete de dispositivo del proveedor | Double INT-A-PAK |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
|
VS-GA100NA60UP | Vishay Semiconductor Diodes Division | IGBT 600V 100A 250W SOT-227 | Detalles |
|
VS-GA100TS120UPBF | Vishay Semiconductor Diodes Division | IGBT 1200V 182A 520W INT-A-PAK | Detalles |
|
VS-GA100TS60SF | Vishay Semiconductor Diodes Division | IGBT 600V 220A 780W | Detalles |
|
VS-GA100TS60SFPBF | Vishay Semiconductor Diodes Division | IGBT 600V 220A 780W INT-A-PAK | Detalles |
|
VS-GA200HS60S1 | Vishay Semiconductor Diodes Division | IGBT 600V 480A 830W | Detalles |
|
VS-GA200HS60S1PBF | Vishay Semiconductor Diodes Division | IGBT 600V 480A 830W INT-A-PAK | Detalles |
|
VS-GA200SA60SP | Vishay Semiconductor Diodes Division | MODULE IGBT SOT-227 | Detalles |
|
VS-GA200SA60UP | Vishay Semiconductor Diodes Division | IGBT 600V 200A 500W SOT-227 | Detalles |
|
VS-GA200TH60S | Vishay Semiconductor Diodes Division | IGBT 600V 260A 1042W INT-A-PAK | Detalles |
 |
VS-GA250SA60S | Vishay Semiconductor Diodes Division | IGBT 600V 400A SOT227 | Detalles |
