| Número de pieza | BAV200-GS18 |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 50V |
| Corriente - promedio rectificado (Io) | 250mA (DC) |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1V @ 100mA |
| Velocidad | Fast Recovery =< 500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | 50ns |
| Current - Reverse Leakage @ Vr | 100nA @ 50V |
| Capacitancia @ Vr, F | 1.5pF @ 0V, 1MHz |
| Tipo de montaje | Surface Mount |
| Paquete / caja | SOD-80 Variant |
| Paquete de dispositivo del proveedor | SOD-80 QuadroMELF |
| Temperatura de funcionamiento - unión | 150°C (Max) |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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BAV20 | Fairchild/ON Semiconductor | DIODE GEN PURP 200V 200MA DO35 | Detalles |
 |
BAV20 A0G | Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 200MA DO35 | Detalles |
 |
BAV20,113 | Nexperia USA Inc. | DIODE GEN PURP 150V 250MA ALF2 | Detalles |
|
BAV20,133 | Nexperia USA Inc. | DIODE GEN PURP 150V 250MA ALF2 | Detalles |
|
BAV20,143 | Nexperia USA Inc. | DIODE GEN PURP 150V 250MA ALF2 | Detalles |
 |
BAV20-TAP | Vishay Semiconductor Diodes Division | DIODE GEN PURP 150V 250MA DO35 | Detalles |
|
BAV20-TR | Vishay Semiconductor Diodes Division | DIODE GEN PURP 150V 250MA DO35 | Detalles |
 |
BAV200 | VISHAY | Silicon Epitaxial Planar Diodes | Detalles |
|
BAV200-GS08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 250MA SOD80 | Detalles |
|
BAV200-GS18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 250MA SOD80 | Detalles |
