BAV200-GS18 - Vishay Semiconductor Diodes Division

Part Number	BAV200-GS18
Part Status	Active
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	50V
Current - Average Rectified (Io)	250mA (DC)
Voltage - Forward (Vf) (Max) @ If	1V @ 100mA
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	50ns
Current - Reverse Leakage @ Vr	100nA @ 50V
Capacitance @ Vr, F	1.5pF @ 0V, 1MHz
Mounting Type	Surface Mount
Package / Case	SOD-80 Variant
Supplier Device Package	SOD-80 QuadroMELF
Operating Temperature - Junction	150°C (Max)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
BAV20	Fairchild/ON Semiconductor	DIODE GEN PURP 200V 200MA DO35	Details
BAV20 A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 200MA DO35	Details
BAV20,113	Nexperia USA Inc.	DIODE GEN PURP 150V 250MA ALF2	Details
BAV20,133	Nexperia USA Inc.	DIODE GEN PURP 150V 250MA ALF2	Details
BAV20,143	Nexperia USA Inc.	DIODE GEN PURP 150V 250MA ALF2	Details
BAV20-TAP	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 250MA DO35	Details
BAV20-TR	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 250MA DO35	Details
BAV200	VISHAY	Silicon Epitaxial Planar Diodes	Details
BAV200-GS08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 250MA SOD80	Details
BAV200-GS18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 250MA SOD80	Details