| Número de pieza | BAS516,H3F |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 100V |
| Corriente - promedio rectificado (Io) | 250mA |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.25V @ 150mA |
| Velocidad | Fast Recovery =< 500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | 3ns |
| Current - Reverse Leakage @ Vr | 200nA @ 80V |
| Capacitancia @ Vr, F | 0.35pF @ 0V, 1MHz |
| Tipo de montaje | Surface Mount |
| Paquete / caja | SC-79, SOD-523 |
| Paquete de dispositivo del proveedor | ESC |
| Temperatura de funcionamiento - unión | 150°C (Max) |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
 |
BAS516 | NXP | BAS516 NXP SOD-52.. New Original Stocks | Detalles |
.jpg "BAS516,115") |
BAS516,115 | Nexperia USA Inc. | DIODE GEN PURP 100V 250MA SOD523 | Detalles |
|
BAS516,135 | Nexperia USA Inc. | DIODE GEN PURP 100V 250MA SOD523 | Detalles |
|
BAS516,315 | Nexperia USA Inc. | DIODE GEN PURP 100V 250MA SOD523 | Detalles |
|
BAS516,H3F | Toshiba Semiconductor and Storage | DIODE GEN PURP 100V 250MA ESC | Detalles |
|
BAS516,L3F | Toshiba Semiconductor and Storage | DIODE GEN PURP 100V 250MA ESC | Detalles |
 |
BAS516-TP | Micro Commercial Co | DIODE GEN PURP 75V 250MA SOD523 | Detalles |
|
BAS516/B | NXP | BAS516/B NXP SOT-52.. New Original Stocks | Detalles |
|
BAS516/DG | NXP | BAS516/DG NXP SOD-52.. New Original Stocks | Detalles |
|
BAS52-02V | INFINEON | BAS52-02V INFINEON SOD523 New Original Stocks | Detalles |
