BAS516,H3F

BAS516,H3F - Toshiba Semiconductor and Storage

Part Number
BAS516,H3F
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
DIODE GEN PURP 100V 250MA ESC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
BAS516,H3F PDF online browsing
Datasheet PDF Download
-
Category
Diodes - Rectifiers - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
5380732 pcs
Reference Price
USD 0.0306/pcs
Our Price
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BAS516,H3F Detailed Description

Part Number BAS516,H3F
Part Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 100V
Current - Average Rectified (Io) 250mA
Voltage - Forward (Vf) (Max) @ If 1.25V @ 150mA
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 3ns
Current - Reverse Leakage @ Vr 200nA @ 80V
Capacitance @ Vr, F 0.35pF @ 0V, 1MHz
Mounting Type Surface Mount
Package / Case SC-79, SOD-523
Supplier Device Package ESC
Operating Temperature - Junction 150°C (Max)
Weight -
Country of Origin -

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