| Número de pieza | BAV101 L1G |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 250V |
| Corriente - promedio rectificado (Io) | 200mA |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1V @ 100mA |
| Velocidad | Small Signal =< 200mA (Io), Any Speed |
| Tiempo de recuperación inversa (trr) | - |
| Current - Reverse Leakage @ Vr | 100nA @ 200V |
| Capacitancia @ Vr, F | 4pF @ 0V, 1MHz |
| Tipo de montaje | Surface Mount |
| Paquete / caja | DO-213AC, MINI-MELF, SOD-80 |
| Paquete de dispositivo del proveedor | Mini MELF |
| Temperatura de funcionamiento - unión | -65°C ~ 200°C |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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BAV10 | SYNSEMI | HIGH SPEED SWITCHING DIODE | Detalles |
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BAV100 | VISHAY | Silicon Epitaxial Planar Diodes | Detalles |
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BAV100-GS08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 250MA SOD80 | Detalles |
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BAV100-GS18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 250MA SOD80 | Detalles |
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BAV100_07 | SEMIKRON | Ultrafast silicon rectifier diodes | Detalles |
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BAV101 | PHIL | BAV101 PHIL SOP New Original Stocks | Detalles |
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BAV101 L0G | Taiwan Semiconductor Corporation | DIODE GP 250V 200MA MINIMELF | Detalles |
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BAV101 L1G | Taiwan Semiconductor Corporation | DIODE GP 250V 200MA MINIMELF | Detalles |
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BAV101-GS08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 250MA SOD80 | Detalles |
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BAV101-GS18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 250MA SOD80 | Detalles |
