| Número de pieza | RFD10P03LSM |
|---|---|
| Estado de la pieza | Obsolete |
| Tipo de FET | P-Channel |
| Tecnología | MOSFET (Metal Oxide) |
| Drene a la fuente de voltaje (Vdss) | 30V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 10A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 10A, 5V |
| Vgs (th) (Max) @ Id | 2V @ 250µA |
| Carga de puerta (Qg) (Max) @ Vgs | 30nC @ 10V |
| Vgs (Max) | - |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 1035pF @ 25V |
| Característica FET | - |
| Disipación de potencia (Máx) | - |
| Temperatura de funcionamiento | - |
| Tipo de montaje | Surface Mount |
| Paquete de dispositivo del proveedor | TO-252-3 |
| Paquete / caja | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
 |
RFD10P03L | HARRIS | RFD10P03L HARRIS TO-252 New Original Stocks | Detalles |
|
RFD10P03LSM | ON Semiconductor | MOSFET P-CH 30V 10A TO-252AA | Detalles |
 |
RFD12N06RLE | Fairchild/ON Semiconductor | MOSFET N-CH 60V 18A IPAK | Detalles |
|
RFD12N06RLESM | FAIRC | RFD12N06RLESM FAIRC TO-252.. New Original Stocks | Detalles |
,%20SC-63.JPG "RFD12N06RLESM9A") |
RFD12N06RLESM9A | Fairchild/ON Semiconductor | MOSFET N-CH 60V 18A DPAK | Detalles |
|
RFD14N05 | Fairchild/ON Semiconductor | MOSFET N-CH 50V 14A I-PAK | Detalles |
|
RFD14N05L | Fairchild/ON Semiconductor | MOSFET N-CH 50V 14A I-PAK | Detalles |
|
RFD14N05LSM | Fairchild/ON Semiconductor | MOSFET N-CH 50V 14A TO-252AA | Detalles |
|
RFD14N05LSM9A | Fairchild/ON Semiconductor | MOSFET N-CH 50V 14A TO-252AA | Detalles |
|
RFD14N05SM | Fairchild/ON Semiconductor | MOSFET N-CH 50V 14A TO-252AA | Detalles |
