| Número de pieza | SI3415A-TP |
|---|---|
| Estado de la pieza | Active |
| Tipo de FET | P-Channel |
| Tecnología | MOSFET (Metal Oxide) |
| Drene a la fuente de voltaje (Vdss) | 20V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 4A |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 45 mOhm @ 4A, 4.5V |
| Vgs (th) (Max) @ Id | 900mV @ 250µA |
| Carga de puerta (Qg) (Max) @ Vgs | 12nC @ 4.5V |
| Vgs (Max) | ±10V |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 950pF @ 10V |
| Característica FET | - |
| Disipación de potencia (Máx) | 1.4W |
| Temperatura de funcionamiento | -55°C ~ 150°C (TJ) |
| Tipo de montaje | Surface Mount |
| Paquete de dispositivo del proveedor | SOT-23 |
| Paquete / caja | TO-236-3, SC-59, SOT-23-3 |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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SI3400-BZ-GM | Silicon Labs | IC POWER OVER ETHERNET 20QFN | Detalles |
|
SI3400-C-GM | Silicon Labs | IC POWER OVER ETHERNET 20QFN | Detalles |
|
SI3400-D-GM | Silicon Labs | IC POWER OVER ETHERNET 20QFN | Detalles |
|
SI3400-E1-GM | Silicon Labs | IC POWER OVER ETHERNET 20QFN | Detalles |
 |
SI3400-GM | Silicon Labs | IC POWER OVER ETHERNET 20QFN | Detalles |
|
SI3400A-TP | Micro Commercial Co | N-CHANNELMOSFETSSOT-23 PACKAGE | Detalles |
|
SI3401-D-GM | Silicon Labs | IC POWER OVER ETHERNET 20QFN | Detalles |
|
SI3401-E1-GM | Silicon Labs | IC POWER OVER ETHERNET 20QFN | Detalles |
|
SI3401A-TP | Micro Commercial Co | P-CHANNELMOSFETSSOT-23 PACKAGE | Detalles |
|
SI3402-A-GM | Silicon Labs | IC POE PD LOW EMI SW REG 20VQFN | Detalles |
