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Casa › Fabricantes › Global Power Technologies Group
global power technologies group, inc. is an integrated development and manufacturing company dedicated to products based on silicon carbide (sic) technologies.
Productos semiconductores discretos
Imagen Número de pieza Descripción Ver
GSXF120A060S1-D3 GSXF120A060S1-D3 DIODE FAST REC 600V 120A SOT227 Detalles
GSXD060A008S1-D3 GSXD060A008S1-D3 DIODE SCHOTTKY 80V 60A SOT227 Detalles
GSXF120A020S1-D3 GSXF120A020S1-D3 DIODE FAST REC 200V 120A SOT227 Detalles
GSXD100A006S1-D3 GSXD100A006S1-D3 DIODE SCHOTTKY 60V 100A SOT227 Detalles
GSXD100A015S1-D3 GSXD100A015S1-D3 DIODE SCHOTTKY 150V 100A SOT227 Detalles
GP2D050A120B GP2D050A120B DIODE SCHOTTKY 1.2KV 50A TO247-2 Detalles
GSXD300A170S2D5 GSXD300A170S2D5 SILICON SCHOTTKY RECTIFIER MODUL Detalles
GP2D024A060B GP2D024A060B SIC SCHOTTKY RECTIFIER Detalles
GDP50P120B GDP50P120B DIODE SCHOTTKY 1.2KV 50A TO247-2 Detalles
GDP36Z060B GDP36Z060B DIODE SCHOTTKY 600V 36A TO247-2 Detalles
GDP08S120A GDP08S120A DIODE SCHOTTKY 1.2KV 8A TO220-2 Detalles
GP2M004A060HG GP2M004A060HG MOSFET N-CH 600V 4A TO220 Detalles
GP2M004A060FG GP2M004A060FG MOSFET N-CH 600V 4A TO220F Detalles
GP2M004A060CG GP2M004A060CG MOSFET N-CH 600V 4A DPAK Detalles
GP2M002A065CG GP2M002A065CG MOSFET N-CH 650V 1.8A DPAK Detalles
GP2M002A060HG GP2M002A060HG MOSFET N-CH 600V 2A TO220 Detalles
GP1M016A060FH GP1M016A060FH MOSFET N-CH 600V 16A TO220F Detalles
GP1M015A050H GP1M015A050H MOSFET N-CH 500V 14A TO220 Detalles
GP1M010A080N GP1M010A080N MOSFET N-CH 900V 10A TO3PN Detalles
GP1M009A070F GP1M009A070F MOSFET N-CH 700V 9A TO220F Detalles
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