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Casa › Fabricantes › Global Power Technologies Group
global power technologies group, inc. is an integrated development and manufacturing company dedicated to products based on silicon carbide (sic) technologies.
Productos semiconductores discretos
Imagen Número de pieza Descripción Ver
GP1M003A090PH GP1M003A090PH MOSFET N-CH 900V 2.5A IPAK Detalles
GP1M003A080FH GP1M003A080FH MOSFET N-CH 800V 3A TO220F Detalles
GP2M020A050N GP2M020A050N MOSFET N-CH 500V 20A TO3PN Detalles
GP2M009A090NG GP2M009A090NG MOSFET N-CH 900V 9A TO3PN Detalles
GP2M008A060HG GP2M008A060HG MOSFET N-CH 600V 7.5A TO220 Detalles
GP2M004A065HG GP2M004A065HG MOSFET N-CH 650V 4A TO220 Detalles
GP2D012A060A GP2D012A060A DIODE SCHOTTKY 600V 12A TO220-2 Detalles
GP2D003A060A GP2D003A060A DIODE SCHOTTKY 600V 3A TO220-2 Detalles
GP2D006A060A GP2D006A060A DIODE SCHOTTKY 600V 6A TO220-2 Detalles
GP2D005A060A GP2D005A060A SCHOTTKY DIODE 600V 5A TO-220-2L Detalles
GP2D006A060C GP2D006A060C DIODE SCHOTTKY 600V 6A TO252-2 Detalles
GP2D003A065A GP2D003A065A DIODE SCHOTTKY 650V 3A TO220-2 Detalles
GP2D008A120A GP2D008A120A SCHOTTKY DIODE 1200V 8A TO-220-2 Detalles
GP2D020A060B GP2D020A060B SCHOTTKY DIODE 600V 20A TO-247-2 Detalles
GHIS075A120T2P2 GHIS075A120T2P2 SI IGBT & SIC SBD HYBRID MODULES Detalles
GHXS050A170S-D3 GHXS050A170S-D3 1700V 50A SIC SBD PARALLEL Detalles
GCMS080A120B3C1 GCMS080A120B3C1 SIC MOSFET 6-PACK MODULE B2_EASY Detalles
GCMS080A120S1-E1 GCMS080A120S1-E1 SIC MOSFET/ SBD MODULE SOT-227 C Detalles
GCMS010A120S7B1 GCMS010A120S7B1 SIC MOSFET/SBD HALF BRIDGE MODUL Detalles
GHIS050A060B3P2 GHIS050A060B3P2 SI IGBT & SIC SBD HYBRID MODULES Detalles
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