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Casa › Produttori › Global Power Technologies Group
global power technologies group, inc. is an integrated development and manufacturing company dedicated to products based on silicon carbide (sic) technologies.
Dispositivi a semiconduttore discreti
Immagine Numero di parte Descrizione vista
GSXF120A060S1-D3 GSXF120A060S1-D3 DIODE FAST REC 600V 120A SOT227 Dettagli
GSXD060A008S1-D3 GSXD060A008S1-D3 DIODE SCHOTTKY 80V 60A SOT227 Dettagli
GSXF120A020S1-D3 GSXF120A020S1-D3 DIODE FAST REC 200V 120A SOT227 Dettagli
GSXD100A006S1-D3 GSXD100A006S1-D3 DIODE SCHOTTKY 60V 100A SOT227 Dettagli
GSXD100A015S1-D3 GSXD100A015S1-D3 DIODE SCHOTTKY 150V 100A SOT227 Dettagli
GP2D050A120B GP2D050A120B DIODE SCHOTTKY 1.2KV 50A TO247-2 Dettagli
GSXD300A170S2D5 GSXD300A170S2D5 SILICON SCHOTTKY RECTIFIER MODUL Dettagli
GP2D024A060B GP2D024A060B SIC SCHOTTKY RECTIFIER Dettagli
GDP50P120B GDP50P120B DIODE SCHOTTKY 1.2KV 50A TO247-2 Dettagli
GDP36Z060B GDP36Z060B DIODE SCHOTTKY 600V 36A TO247-2 Dettagli
GDP08S120A GDP08S120A DIODE SCHOTTKY 1.2KV 8A TO220-2 Dettagli
GP2M004A060HG GP2M004A060HG MOSFET N-CH 600V 4A TO220 Dettagli
GP2M004A060FG GP2M004A060FG MOSFET N-CH 600V 4A TO220F Dettagli
GP2M004A060CG GP2M004A060CG MOSFET N-CH 600V 4A DPAK Dettagli
GP2M002A065CG GP2M002A065CG MOSFET N-CH 650V 1.8A DPAK Dettagli
GP2M002A060HG GP2M002A060HG MOSFET N-CH 600V 2A TO220 Dettagli
GP1M016A060FH GP1M016A060FH MOSFET N-CH 600V 16A TO220F Dettagli
GP1M015A050H GP1M015A050H MOSFET N-CH 500V 14A TO220 Dettagli
GP1M010A080N GP1M010A080N MOSFET N-CH 900V 10A TO3PN Dettagli
GP1M009A070F GP1M009A070F MOSFET N-CH 700V 9A TO220F Dettagli
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