E4D20120A Detailed Description
| Part Number |
E4D20120A |
| Part Status |
Active |
| Diode Type |
Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) |
1200V |
| Current - Average Rectified (Io) |
54.5A (DC) |
| Voltage - Forward (Vf) (Max) @ If |
1.8V @ 20A |
| Speed |
No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) |
0ns |
| Current - Reverse Leakage @ Vr |
200µA @ 1200V |
| Capacitance @ Vr, F |
1500pF @ 0V, 1MHz |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-2 |
| Supplier Device Package |
TO-220-2 |
| Operating Temperature - Junction |
-55°C ~ 175°C |
| Weight |
- |
| Country of Origin |
- |
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