Part Number | C3M0075120D |
---|---|
Part Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1200V |
Current - Continuous Drain (Id) @ 25°C | 30A |
Drive Voltage (Max Rds On, Min Rds On) | 15V |
Rds On (Max) @ Id, Vgs | 90 mOhm @ 20A, 15V |
Vgs(th) (Max) @ Id | 4V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs | 54nC @ 15V |
Vgs (Max) | +19V, -8V |
Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 1000V |
FET Feature | - |
Power Dissipation (Max) | 113.6W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 |
Weight | - |
Country of Origin | - |