VS-GB100TP120N

VS-GB100TP120N - Vishay Semiconductor Diodes Division

Part Number
VS-GB100TP120N
Manufacturer
Vishay Semiconductor Diodes Division
Brief Description
IGBT 1200V 200A 650W INT-A-PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
VS-GB100TP120N PDF online browsing
Datasheet PDF Download
-
Category
Transistors - IGBTs - Modules
Delivery Time
1 Day
Date Code
New
Stock Quantity
304 pcs
Reference Price
USD 87.7954/pcs
Our Price
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VS-GB100TP120N Detailed Description

Part Number VS-GB100TP120N
Part Status Active
IGBT Type -
Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 200A
Power - Max 650W
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 100A
Current - Collector Cutoff (Max) 5mA
Input Capacitance (Cies) @ Vce 7.43nF @ 25V
Input Standard
NTC Thermistor No
Operating Temperature 150°C (TJ)
Mounting Type Chassis Mount
Package / Case INT-A-Pak
Supplier Device Package INT-A-PAK
Weight -
Country of Origin -

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