| Part Number | VS-GB100TS60NPBF |
|---|---|
| Part Status | Active |
| IGBT Type | NPT |
| Configuration | Half Bridge |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 108A |
| Power - Max | 390W |
| Vce(on) (Max) @ Vge, Ic | 2.85V @ 15V, 100A |
| Current - Collector Cutoff (Max) | 100µA |
| Input Capacitance (Cies) @ Vce | - |
| Input | Standard |
| NTC Thermistor | No |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | INT-A-Pak |
| Supplier Device Package | INT-A-PAK |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
VS-GB100DA60UP | Vishay Semiconductor Diodes Division | MODULE IGBT SOT-227 | Details |
|
VS-GB100LH120N | Vishay Semiconductor Diodes Division | IGBT 1200V 200A 833W INT-A-PAK | Details |
|
VS-GB100LP120N | Vishay Semiconductor Diodes Division | IGBT 1200V 200A 658W INT-A-PAK | Details |
|
VS-GB100NH120N | Vishay Semiconductor Diodes Division | IGBT 1200V 200A 833W INT-A-PAK | Details |
|
VS-GB100TH120N | Vishay Semiconductor Diodes Division | IGBT 1200V 200A 833W INT-A-PAK | Details |
|
VS-GB100TH120U | Vishay Semiconductor Diodes Division | IGBT 1200V 200A 1136W INT-A-PAK | Details |
|
VS-GB100TP120N | Vishay Semiconductor Diodes Division | IGBT 1200V 200A 650W INT-A-PAK | Details |
|
VS-GB100TP120U | Vishay Semiconductor Diodes Division | IGBT 1200V 150A 735W INT-A-PAK | Details |
|
VS-GB100TS60NPBF | Vishay Semiconductor Diodes Division | IGBT 600V 108A 390W INT-A-PAK | Details |
|
VS-GB100YG120NT | Vishay Semiconductor Diodes Division | OUTPUT SW MODULES - ECONO IGBT | Details |
