VS-GB100TH120N - Vishay Semiconductor Diodes Division

Part Number	VS-GB100TH120N
Part Status	Active
IGBT Type	-
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	200A
Power - Max	833W
Vce(on) (Max) @ Vge, Ic	2.35V @ 15V, 100A
Current - Collector Cutoff (Max)	5mA
Input Capacitance (Cies) @ Vce	8.58nF @ 25V
Input	Standard
NTC Thermistor	No
Operating Temperature	150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Double INT-A-PAK (3 + 4)
Supplier Device Package	Double INT-A-PAK
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
VS-GB05XP120KTPBF	Vishay Semiconductor Diodes Division	MODULE MTP SWITCH	Details
VS-GB100DA60UP	Vishay Semiconductor Diodes Division	MODULE IGBT SOT-227	Details
VS-GB100LH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 200A 833W INT-A-PAK	Details
VS-GB100LP120N	Vishay Semiconductor Diodes Division	IGBT 1200V 200A 658W INT-A-PAK	Details
VS-GB100NH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 200A 833W INT-A-PAK	Details
VS-GB100TH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 200A 833W INT-A-PAK	Details
VS-GB100TH120U	Vishay Semiconductor Diodes Division	IGBT 1200V 200A 1136W INT-A-PAK	Details
VS-GB100TP120N	Vishay Semiconductor Diodes Division	IGBT 1200V 200A 650W INT-A-PAK	Details
VS-GB100TP120U	Vishay Semiconductor Diodes Division	IGBT 1200V 150A 735W INT-A-PAK	Details
VS-GB100TS60NPBF	Vishay Semiconductor Diodes Division	IGBT 600V 108A 390W INT-A-PAK	Details