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Home › Product Categories › Discrete Semiconductor › Transistors - IGBTs - Modules › VS-ENQ030L120S
VS-ENQ030L120S

VS-ENQ030L120S - Vishay Semiconductor Diodes Division

Part Number
VS-ENQ030L120S
Manufacturer
Vishay Semiconductor Diodes Division
Brief Description
IGBT 1200V 61A 216W EMIPAK-1B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
VS-ENQ030L120S PDF online browsing
Datasheet PDF Download
-
Category
Transistors - IGBTs - Modules
Delivery Time
1 Day
Date Code
New
Stock Quantity
7 pcs
Reference Price
USD 117.94/pcs
Our Price
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VS-ENQ030L120S Detailed Description

Part Number VS-ENQ030L120S
Part Status Active
IGBT Type Trench
Configuration Three Level Inverter
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 61A
Power - Max 216W
Vce(on) (Max) @ Vge, Ic 2.52V @ 15V, 30A
Current - Collector Cutoff (Max) 230µA
Input Capacitance (Cies) @ Vce 3.34nF @ 30V
Input Standard
NTC Thermistor Yes
Operating Temperature 150°C (TJ)
Mounting Type Chassis Mount
Package / Case EMIPAK-1B
Supplier Device Package EMIPAK-1B
Weight -
Country of Origin -

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VS-ENQ030L120S VS-ENQ030L120S Vishay Semiconductor Diodes Division IGBT 1200V 61A 216W EMIPAK-1B Details