| Part Number | VP0808B-E3 |
|---|---|
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 880mA (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta) |
| Rds On (Max) @ Id, Vgs | 5 Ohm @ 1A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-39 |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
VP0808B | Vishay Siliconix | MOSFET P-CH 80V 0.88A TO-205 | Details |
|
VP0808B-2 | Vishay Siliconix | MOSFET P-CH 80V 0.88A TO-205 | Details |
|
VP0808B-E3 | Vishay Siliconix | MOSFET P-CH 80V 0.88A TO-205 | Details |
 |
VP0808CHP | EXSHINE | P-Channel Enhancement-Mode D-MOS POWER FETs | Details |
,TO-226_straightlead.jpg "VP0808L-G") |
VP0808L-G | Microchip Technology | MOSFET P-CH 80V 0.28A TO92-3 | Details |
|
VP0808M | EXSHINE | P-Channel Enhancement-Mode MOSFET Transistors | Details |
 |
VP0865840000G | Amphenol Anytek | TERM BLK 8P SIDE ENT 10.16MM PCB | Details |
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VP0865850000G | Amphenol Anytek | TERM BLK 8P SIDE ENT 10.16MM PCB | Details |
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VP0865870000G | Amphenol Anytek | TERM BLK 8P SIDE ENT 10.16MM PCB | Details |
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VP0865880000G | Amphenol Anytek | TERM BLK 8P SIDE ENT 10.16MM PCB | Details |
