SQA401EEJ-T1_GE3 - Vishay Siliconix

Part Number	SQA401EEJ-T1_GE3
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	113 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	5.3nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	375pF @ 10V
FET Feature	-
Power Dissipation (Max)	13.6W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	SQA401EEJ-T1_GE3	Vishay Siliconix	MOSFET P-CHAN 20V POWERPAK SC-70	Details
	SQA401EJ-T1_GE3	Vishay Siliconix	MOSFET P-CH 20V POWERPAK SC-70-6	Details