SISA72ADN-T1-GE3 - Vishay Siliconix

Part Number	SISA72ADN-T1-GE3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	25.4A (Ta), 94A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.25 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	2530pF @ 20V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	SISA72ADN-T1-GE3	Vishay Siliconix	MOSFET N-CHAN 40-V POWERPAK 1212	Details
	SISA72DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 40V 60A 1212-8	Details