SI8808DB-T2-E1 - Vishay Siliconix

Part Number	SI8808DB-T2-E1
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On,Min Rds On)	1.5V, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds	330pF @ 15V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Rds On (Max) @ Id, Vgs	95 mOhm @ 1A, 4.5V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-Microfoot
Package / Case	4-UFBGA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SI8800EDB-T2-E1	Vishay Siliconix	MOSFET N-CH 20V MICROFOOT	Details
SI8802DB-T2-E1	Vishay Siliconix	MOSFET N-CH 8V MICROFOOT	Details
SI8805EDB-T2-E1	Vishay Siliconix	MOSFET P-CH 8V MICROFOOT	Details
SI8806DB-T2-E1	Vishay Siliconix	MOSFET N-CH 12V MICROFOOT	Details
SI8808DB-T2-E1	Vishay Siliconix	MOSFET N-CH 30V MICROFOOT	Details
SI8809EDB-T2-E1	Vishay Siliconix	MOSFET P-CH 20V 1.9A MICROFOOT	Details