SI8809EDB-T2-E1 Detailed Description
| Part Number |
SI8809EDB-T2-E1 |
| Part Status |
Active |
| FET Type |
P-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
20V |
| Current - Continuous Drain (Id) @ 25°C |
- |
| Drive Voltage (Max Rds On,Min Rds On) |
1.8V, 4.5V |
| Vgs(th) (Max) @ Id |
900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
15nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds |
- |
| Vgs (Max) |
±8V |
| FET Feature |
- |
| Power Dissipation (Max) |
500mW (Ta) |
| Rds On (Max) @ Id, Vgs |
90 mOhm @ 1.5A, 4.5V |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
4-Microfoot |
| Package / Case |
4-XFBGA |
| Weight |
- |
| Country of Origin |
- |
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