SI8802DB-T2-E1

SI8802DB-T2-E1 - Vishay Siliconix

Part Number
SI8802DB-T2-E1
Manufacturer
Vishay Siliconix
Brief Description
MOSFET N-CH 8V MICROFOOT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SI8802DB-T2-E1 PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
82500 pcs
Reference Price
USD 0.1597/pcs
Our Price
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SI8802DB-T2-E1 Detailed Description

Part Number SI8802DB-T2-E1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On,Min Rds On) 1.2V, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Vgs (Max) ±5V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Rds On (Max) @ Id, Vgs 54 mOhm @ 1A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-Microfoot
Package / Case 4-XFBGA
Weight -
Country of Origin -

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