SI7172ADP-T1-RE3 - Vishay Siliconix

Part Number	SI7172ADP-T1-RE3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	50 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19.5nC @ 10V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	1110pF @ 100V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-55°C ~ 125°C
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SI7172ADP-T1-RE3	Vishay Siliconix	MOSFET N-CHAN 200V POWERPAK SO-8	Details
Si7172DP-T1-E3	VISHAY	Si7172DP-T1-E3 VISHAY QFN8 New Original Stocks	Details
SI7172DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 200V 25A PPAK SO-8	Details