| Part Number | IRF610LPBF |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.2nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 140pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 36W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 2A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I2PAK |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
IRF60B217 | Infineon Technologies | MOSFET N-CH 60V 60A | Details |
 |
IRF60DM206 | Infineon Technologies | MOSFET N-CH 60V 130A | Details |
 |
IRF60R217 | Infineon Technologies | MOSFET N-CH 60V 58A | Details |
 |
IRF610 | Vishay Siliconix | MOSFET N-CH 200V 3.3A TO-220AB | Details |
 |
IRF6100 | Infineon Technologies | MOSFET P-CH 20V 5.1A FLIP-FET | Details |
|
IRF6100PBF | Infineon Technologies | MOSFET P-CH 20V 5.1A FLIPFET | Details |
|
IRF610L | Vishay Siliconix | MOSFET N-CH 200V 3.3A TO-262 | Details |
|
IRF610LPBF | Vishay Siliconix | MOSFET N-CH 200V 3.3A TO-262 | Details |
|
IRF610PBF | Vishay Siliconix | MOSFET N-CH 200V 3.3A TO-220AB | Details |
 |
IRF610S | Vishay Siliconix | MOSFET N-CH 200V 3.3A D2PAK | Details |
